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| IGBT Module Preliminary Data Sheet S15 R15 A15 A7 A9 D1 A1 U1 V1 PSII 50/06* IC80 = VCES = VCE(sat)typ. = ECO-TOPTM 1 48 A 600 V 2.3 V G15 V12 V13 K1 G1 V3 V6 N15 V9 V10 Q1 N1 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH et he r se ta nd da l u ve stil ent ti t ta c n u opm te od el r ev pd Conditions Maximum Ratings 600 TVJ = 25C to 150C V typical picture, for pin configuration see outline drawing *NTC optional 20 V TC = 25C TC = 80C 69 48 A A VGE = 15 V; RG = 22 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H 100 VCES A VCE = VCES; VGE = 15 V; RG = 22 ; TVJ = 125C non-repetitive TC = 25C 10 s W 208 Features * * * * * * * * * * * * * * * Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.3 2.8 2.8 IC = 75 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; V V 4.5 6.5 V Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL Release applied VGE = 0 V; TVJ = 25C TVJ = 125C 0.8 4.4 mA mA Applications VCE = 0 V; VGE = 20 V 100 nA Inductive load, TVJ = 125C VCE = 300 V; IC = 40 A VGE = 15/0 V; RG = 22 50 55 300 30 1.8 1.4 2.8 1.2 ns ns ns ns mJ mJ AC and DC motor control AC servo and robot drives Power supplies Welding inverters Advantages Easy to mount with four screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 m) nF 0.6 K/W K/W Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 40 A; TVJ = 25C TVJ = 125C IF = 30 A; diF/dt = 500 A/s; TVJ = 125C VR = 300 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 m) Maximum Ratings 56 35 A A Characteristic Values min. typ. max. 2.32 1.58 15 70 2.59 V V A ns Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight Conditions IISOL 1 mA; 50/60 Hz Mounting torque (M5) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) t ee sh er ta nd au d ll ve sti ent ti t ta uc m nd t op o vel re pd 2.6 1.3 K/W K/W Characteristic Values min. typ. max. 5.0 3375 4.75 5.25 k K Maximum Ratings -40...+125 -40...+150 3000 C C V~ 3 26 50 Nm lb.in. m/s 2 Characteristic Values min. typ. max. 11.2 11.2 mm mm g 86 Package style and outline Dimensions in mm (1mm = 0.0394") 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 150 A 120 VGE= 17 V 15 V 13 V 150 A 120 90 11V VGE= 17 V 15 V 13 V IC IC 90 60 30 0 11V TVJ = 125C TVJ = 25C 9V 60 30 0 9V 42T60 42T60 0 1 Fig. 1 Typ. output characteristics 150 A 120 IC 90 60 30 0 TVJ = 125C 4 6 Fig. 3 Typ. transfer characteristics 20 V 15 VGE t ee sh er ta nd au dl ve stil ent ti t ta c n u opm te od el pr dev 2 3 4 5 V 6 0 1 2 3 4 5V 6 VCE VCE Fig. 2 Typ. output characteristics 90 A 75 60 45 30 15 VCE = 20 V IF TVJ = 125C TVJ = 25C TVJ = 25C 42T60 0 42T60 8 10 12 14 V 16 0,0 0,5 1,0 1,5 V 2,0 VGE VF Fig. 4 Typ. forward characteristics of free wheeling diode 150 120 ns 90 TVJ = 125C VR = 300 V IF = 30 A IRM 50 40 A 30 20 10 VCE = 300 V IC = 50 A IRM trr trr 60 30 42T60 5 10 42T60 0 0 0 40 80 120 QG nC 160 0 200 400 600 -di/dt 800 A/s 1000 0 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 10,0 mJ Eon td(on) 100 ns 75 t Eoff 4 mJ Eoff 400 ns 300 t 7,5 tr 3 5,0 50 VCE = 300 V VGE = 15 V 2 td(off) VCE = 300 V VGE = 15 V RG = 22 TVJ = 125C 200 2,5 Eon RG = 22 TVJ = 125C 42T60 25 1 100 tf 0,0 0 Fig. 7 Typ. turn on energy and switching 4 mJ Eon 3 2 1 0 10 Fig. 9 Typ. turn on energy and switching 120 A ICM et e sh er ta nd au dl ve stil ent ti t ta c n u opm te od el r ev pd 40 80 A 120 0 0 42T60 0 40 IC 80 IC A 0 120 Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 600 ns 400 t td(on) Eon tr 80 ns 3 mJ 60 t Eoff 2 Eoff td(off) VCE = 300 V VGE = 15 V IC = 50 A TVJ = 125C 40 1 VCE = 300 V VGE = 15 V IC = 50 A TVJ = 125C 200 42T60 20 30 40 50 60 20 0 tf 42T60 0 10 20 30 40 50 60 0 RG RG Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 10 K/W 1 diode IGBT 90 RG = 22 TVJ = 125C ZthJC 0,1 0,01 60 30 0,001 42T60 single pulse 0 0 100 200 300 400 500 600 VCE 700 V 0,0001 0,00001 0,0001 0,001 VID...75-06P1 0,01 0,1 t 1 s 10 Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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